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Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

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Fig. 1. Thermal ALD experiments, where no self-limiting growth behavior was observed. (a) Deposition rates of AlN thin films at different temperatures (■)
Fig. 4. Film thickness vs. number of deposition cycles. (Inset) Deposition rate of AlN as a function of plasma power.
Fig. 6. GIXRD pattern of ~ 100 nm thick AlN thin film deposited on Si (100). Film is polycrystalline with a hexagonal wurtzite structure.
Fig. 7. (a) Cross-sectional TEM image of ~ 100 nm thick AlN thin film deposited at 185 °C on Si (100)
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