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Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition

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Fig. 1 A schematic showing the growth process sequence of In x Ga 1x N thin films with a single sub cycle of InN and GaN.
Table 1 Lattice parameters and alloy compositions (as determined by Vegard’s law) for GaN, In x Ga 1x N, and InN films
Fig. 3 Indium concentration values obtained from EDX, XPS, and GIXRD for In x Ga 1x N films having different RS values.
Fig. 5 Ga 3d, In 3d, and N 1s HR-XPS scans of In 0.25 Ga 0.75 N (a, b and c), In 0.33 Ga 0.67 N (d, e and f), and In 0.64 Ga 0.36 N (g, h and i) thin films deposited on Si(100).
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