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Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

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Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electrnormally-on mobility transistors (DCHEMTs) Article  in  Journal of Optoelectronics and Advanced Materials · May 2009

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