T.C.
SELÇUK ÜNİVERSİTESİ FEN BİLİMLERİ ENSTİTÜSÜ
ÇOK GENİŞ BANTLI YERE NÜFUZ EDEN RADAR İÇİN DARBE ÜRETECİ TASARIMI
VE BENZETİMİ Ahmet YILDIRIM YÜKSEK LİSANS TEZİ
ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ Anabilim Dalı
Temmuz-2017 KONYA Her Hakkı Saklıdır
iv
2017, 98 Sayfa J
YNR
n
n temel bir kaynak
v
Ahmet YILDIRIM
THE GRADUATE SCHOOL OF NATURAL AND APPLIED SCIENCE OF VERSITY
THE DEGREE OF MASTER OF SCIENCE
IN ELECTRICAL AND ELECTRONICS ENGINEERING Advisor: Dr. Ercan YALDIZ
2017, 98 Pages Jury
Assoc.Prof.Dr. Ercan YALDIZ Asst.Prof.Dr.
Asst.Prof.Dr.
In this work, it is given information about UWB (Ultra Wide Band) GPR(Ground Penetrating Radar) system. Short pulse generator is analysed and researched for UWB GPR system. New designs are proposed and simulated. Design method is perused in the literature of generator. Literature review is classified by design method and this groups is compared with each other. Then they are analysed according to good level pulse duration and pulse amplitude. This design is recommended for future studies of UWB GPR generators. Finally this work shows basic information about UWB GPR generators.
vi .
Ahmet YILDIRIM Konya-2017
vii ... vii ... ix ... 1 1.1. Kapsam ... 1 ... 2 ... 2 ... 4 ... 4 ... 4 ... 5 ... 9 ... 10 ... 10 ... 13 ... 16 2.3.1 ... 16 ... 22 2.4.1. Verici birim ... 23 ... 25 ... 26 2.4.4. Zamanlama devresi ... 31 ... 34 ... 39 ... 39 ... 41 ... 41 ... 42 ... 50 ... 50 ... 51 ... 51 ... 53
viii ... 59 ... 59 ... 60 ... 62 ... 63 ... 64 ... 75 ... 75 5.1.1. ... 75 ... 78 ... 84 ... 84 ... 85 ... 86 ... 87 ... 88 ... 88 ... 89 KAYNAKLAR ... 91
ix
Tp :
AR : Darbede
U(t) : Birim basamak fonksiyonu
PR(t) :
PR( f ) : F
PG(t) : Gaussian darbe
PG( f ; ) : Gaussian frekans spektrum
Tw : Gaus PGD(t) : Gaussian PGD( f ) : Gaussian dB : Desibel dBm : fC : fH : st kesim fre fL : 10 dB a BWR : w : n : Nano seviyesi
(xi,yj) : Belirli bir noktadaki sinyal
b(xi,yj,t) : Bir boyutlu veri sinyali
b(x,y,t) : R : h : z : : sabiti L : a : : d : : Zin : ZoN : Wn : dn : ln : n : : T : TR : fT :
x
ABD :
ADS : Advanced Design System ASD
BJT : Bipolar Junction Transistor
CMOS : Complementary Metal Oxide Semiconductor DC : Direct Current
DDO DTA DTF
ECC : Electronic Communications Committee EM : Elektromanyetik
FCC : Federal Communication Commission FDTD : Finite-Difference Time-Domain FEM : Finite Element Method
FMCW : Frequency Modulated Continuous Wave DGY
GPR : Ground Penetrating Radar LC : Inductor-Capacitor
MoM : Method of Moment
MOSFET : Metal Oxide Semiconductor Field Effect Transistor
NMOS : n-Channel MOSFET
NTIA : The National Telecommunications and Information Administration RC : Resistor, Capacitor
RF
SDR : System Dynamic Range SGY
SRD : Step Recovery Diode TTL : Transistor-Transistor Logic UWB : Ultra Wide Band
VCDL : Voltage Controlled Delay Line YNR
1.1. Kapsam
(Ground Penetrating Radar: GPR) sistemi konusunda
(Eltesta, 2015)
(Grazzini ve ark., 2010) de (He F., 2010) YNR teknolojisi
-Ultra Wide Band : UWB) sistem teknolojisi
frekansla
algoritma
gerilim ve
1.2.
,
isteklerine
1.3.
lacak alan
rol oynayan temel bilgiler ve ikinci
sistemlerin
e
tir. A
2. TEMEL 2.1. 2.1.1. Darbe t seviyelerindeki (Blattenberger, 2016). 2.1 darbe .2 ideal
olmayan bir darbe ne dik
zamanlar 0- gerekli olan darbe
zamanlar
(Blattenberger, 2016).
2.2 darbe dalga formu
rtgen ectangular), ani darbe (i
(s (McLaughlin, 2004).
2.3
2.1.2. Gaussian darbe
Gaussian filtrelenerek modellenir(Di Benedetto, 2006).
Bir Gaussian 2 ) / ) )(( 2 / 1 ( Re 2 1 ) (t e t P (2.1)
ile verilir. Burada darbe merkezini verir. DC terimler
Gaussian darbeler zaman ve frekans
Gaussian dalga lan
Gaussian
PRe(t)
PRe(t) denkleminin
birinci derecede li Gaussian
PRe(t) denkleminin ikinc li Gaussian dalga
2.5 Gaussian
2.1.2.1. arbesi
Gaussian darben
li Gaussian PG(t) Denklem (2.2) ile
2 ) / ) )(( 2 / 1 ( 2 ] ) ( 1 [ 2 1 ) ( t G e t t P (2.2) evrimli Gaussian ve
li Gaussian frekans spektrum ifadesi PG(f; ) Denklem (2.3) ile
f j f
G f f e e
P ( ) (2 )2 (1/2)(2 )2 2 (2.3)
imli Gaussian darbesi
Gaussian
li Gaussian darbesinin zaman ve frekans
2.1.2.2. aussian darbesi
Gaussian Gaussian
Tw ile ifade edilmekte olup, Denklem (2.4 PGD(t)
Gaussian darbesinin esini vermektedir. Denklem (2.5 e PGD(
f ) Gaussian darbesinin ] [ 2 1 ) ( (1/2)((t )/ )2 (1/2)((t Tw)/ )2 GD t e e P (2.4) ] 5 . 0 ) 5 . 0 ( 2 [ ) 2 )( 2 / 1 ( 2 ) sin( 2 2 ) ( GD w f j f T Tw GD f A f T e e w P (2.5) Tw, , ve Tw=7 Tp=14 olur.
Gaussian li Gaussian ve Gaussian
darbe birbirlerine b li
Gaussian darbesinin spektral zarf minimumlara sahiptir.
minimumlar ara darbe
li Gaussian darbesi bant g Gaussian li Gaussian
darbesi
. .1
Gaussian sinyalleri frekans yerleri 10 dB bant
ifadesi Denklem 2.6 ;
B10dB = fH fL (2.6)
spek H ve fL . Normal merkez
frekans fc Denklem 2.7 ;
2.5
2.1 Gaussian
Darbe dalga formu fc B
Gaussian darbe 1/Tp 2/Tp Gaussian doublet 1/Tp 2/Tp Gaussian darbe 1.73/Tp 2.1/Tp Gaussian darbe 2/Tp 2/Tp 2.1.3. ki darbe Gaussian
g darbe Darbe tekrar
darbe alttaki
bant -4 dB ve 1 GHz merkezli darbe
spektrumu verir, o da 100
Darbe Darbe
indeki bir sinyalin spektrum inde dalga (Hamran, 2010).
2.2. 2 ans , mesafe ve R BW c l u f f f (2.8) . Burada; fu: 10 fl fc fc ise; 2 l u c f f f (2.9) uygula
engellemek veya en aza indirgemek FCC (Federal Communication Commission) nda g esi : .2 3.1 GHz -10.6 GHz YNR <960 MHz veya 3.1 GHz -10.6 GHz istemleri <960 MHz veya 1.99 GHz -10.6 GHz 1.99 GHz -10.6 GHz 24 GHz 29 GHz .3 f i Frekans (MHz) (dBm) (dBm) <960 -41.3 -41.3 960-1610 -75.3 -75.3 1610-1990 -53.3 -63.3 1990-3100 -51.3 -61.3 3100-10600 -41.3 -41.3 >10600 -51.3 -61.3
2.7 maskesi
960 .4 <960 MHz >960 MHz -49.2 dBm/MHz -41.2 dBm/MHz Limitleri -38.3 dBm/MHz -35.2 dBm/MHz -49.2 dBm/MHz -41.2 dBm/MHz potansiyeli
Bununla beraber, The National Telecommunications and Information Administration (NTIA)
Olhoeft (Olhoeft, 2002) Electronic Communications Committee (ECC)
(ECC, 2006).
2.2.2.
knolojisinin manyetik alanlar ve
it bir kavramla ifade edebilir. Bunu
.
y(t)= h(u)x(t u)du (2.10)
(Ross, 1973) (Robbins, 1972) (carrier-a , ile ilgilidir. . a - n 1 (Fontana, 2002). 2.9
2.10 a m den hareketli cismin takibini 2.10 e da nin (MobilVox, 2004). 2.11
2.3.
2.3.1. eden
, (EM) yayar
sabiti, manyetik iletkenlik gibi elektriksel parametrelere
makroskopik parametre
geri elektrik sabitine
k
r ne ( o = 4 10-7 H/m) kontrast
Dielektrik sabitindeki ( r)
ylece
(toprak) dielektrik sabit
. 04)
modelleri
mele (Kesemen, 2007)
incelenebilir.
na denklemleri ile ifade edilmektedir.
(Scheers ve ark., 2000) Lee ve ark. (2004)
emleri ile
metal olmayan cisimlerin
sinyaller a genel bir YNR blok
2.12
r
eriyle temsil edilir.
-Tarama, B-Tarama ve C- (Scheers,
2001).
2.3.1.1. A-tarama
Belirli bir noktadaki (xi,yj)
her bir dalga formu b(xi,yj,t), bir A- e ortamda EM
2.14 len dalga formu
2.3.1.2. B-tarama
x
A-tarama serileri b(xi,yj,t), 2-boyutlu B-tarama
2.15 -taramalar bir
Zaman ekseni veya ilgili derinlik
daki yans zme
- v olan
ve verici, bir hom , tek bir
(0,zo )
(x,0) da x2 zo2
b(x,t)
zaman sonra her bir A- ).
t=2 x2 zo2 /v (2.11)
Denklem(2.11) bir hiperbolu temsil e zo nokta
2.16 (Solda) (0,zo)Durumund aydedilen veri
2.3.1.3. C-tarama
ter -taramalar
topla xy
hareket ettir , C- b(x,y,t) kaydedilebilir.
Genellikle bir C-tarama, verilen bir tizaman
Son zamanlarda a -tarama
sahiptir. r
Lukyanov ve ark. (2010) enebilir.
2.17 aralel B-taramalar ile bir C-tarama
2.19
(Koppenjan, 2009).
(Hamran, 2010).
FMCW (Frequency modulated continuous wave
ise belirli bir frekanstaki sinyal
(Jol, 2008) edinilebilir.
tekrar lik
sinyallerdir. Genellikle Gaussian
bir
2.4.
YNR onu klas
cis adar sistemlerinin revi sinyalin tekrar
sinyalin analizinden ibarettir. YNR
YNR
YNR darbe YNR
YNR
uygulamalarda tercih edilirler. YNR sistemleri do bunlar; darbe (Scheers, 2001).
tetikleyen
YNR de enerji yayabilmek
2.4.1. Verici birim
Verici belli
li veya bir Gaussian Gaussian darbe veya basamak
, ). Darbe 2.4.1.1. li T li D
cisimleri tespit etmek
darbe
(Sahinkaya ve Turk, 2004).
lama sistemin
teknoloji genellikle YNR rler, SRD diyot veya bu ikisinin
SRD dar r ve SRD
diyotlar 100
edilebilir. Bu k
2.22 anahtar
transistoru iletim moduna RL
2.22
2.23 2.4.2. YNR darbe YNR i , h ve darbe Yer YNR ni darbe YNR bant Darbe
ercih edilir. YNR menzil ani darbe
EM horn antenler tercih
ani darbe YNR
dielektrik
celenen ve sinyal analizi bulunabilir (Rial ve ark., 2009).
2.4.3.
YNR d (DGY), rnekleme ve tutma ( )
devresi ve tutma devresinde ge 2.24 (Xu ve ark., 2013) .
F veya Sigma
200 . YNR
sinyaller GHz mertebesinde frekanslara sahiptir, standart ASD
veya
zamanlama kontrol devresi iki rampa a.
e ASD veya ir.
2.25 ASD
a bir
A-taramada a DTF
-taramada
darbe -tarama ve DTF
iye ba -taramalar -taramalar
sahiptir veya hatta k
T T
Ts p (2.12)
(Scheers, 2001).
2.4.3.2. leme ve tutma devresi
(Scheers, 2001) s
s
2.26 s ngeli (Integrated Circuit) iki diyot (Scheers, 2001). n (Xu ve ark., 2013). 2.4.3.3. (DGY)
Zamanla (Robens ve ark., 2009) edinilebilir. 2.4.3.4. Verici a R R-2 aranan 2.27 e z (Scheers, 2001). 2.27 Zaman f -taramada A -n
RF sinyalinin geri ki uyumsuz faz senkronizasyon ani darbe ramp ZDKY n karakterize .28
ile belli ps giri
2.28
r dikkat gerekmektedir. Thumb
(Scheers, 2001).
20 ps) sinyali elde etmeye engel
Ba arametreleri;
ileyen parametreler: nesnenin boyutu, istenen ile dengeli v Merkez frekans ve darbe 2 . , maksimum derinlik (Scheers, 2001).
2.5 Merkez frekans ve darbe
Merkez Frekans Darbe r=4 r=15 500 MHz 2 ns 15 cm 7.7 cm 1 GHz 1 ns 7.5 cm 3.9 cm 2 GHz 0.5 ns 3.75 cm 1.9 cm 3 GHz 0.33 ns 2.5 cm 1.3 cm 1 GHz frek n yerlerde (toprak) dalga boyu,
-tarama 2.29 a veya 2.29 (0 cm ile 20 cm derinlik ) (Tg) en (Smax) ile . 2 . m ax g T v S (2.13) 2 Tg Smax c/5
2.6 Maksimum derinlik incelemesi smax (cm) Tg (ns) 18 6 30 10 60 20 resi yeterlidir.
2.4.4.3.
2.4.4.4. Darbe (DTA)
DTA hedef tespitinde en uzak menzil darbe y
YNR Yer
bunun sonucunda DTA az. Pratikte DTA, verici
DTA bir
A-ktir. DTA 00 1000
-t 512 nokta gerekiyorsa, bir
A-2.5. B stemi
Normal darbe r nderilen darbe
Ani darbe darbe
0 ani darbe iki ksek 0 a ASD i strobosko 2.31
nderilen darbe tetikle
1 ani darbe radar
Y , ani
darbe ASD 2.32 bu tip bir ani
darbe Pratikte b
ek bit ASD her bir
(Complementary Metal Oxide Semiconductor)
sinyal
Yukarda
T
(PSD:Power Spectral Density) T R
); B PSD T T P P R T (2.14)
range,SDR), i , T0 ,kB Boltzmann sabiti, F ) ( 2 SNR F T k G B PSB SDR o B i (2.15) p np adet darbeleri SDR: ) ( 2 SNR F T k n G B PSB SDR o B p i (2.16) olur. gerekli ise, nb =212 Bu durumda SDR; ) ( 2 SNR F T k n G B PSB SDR o B b i (2.17)
2.32 Ani darbe
B tarama, Hamran (2010) 0.5
m ile 3
3.1. retimi benzer Yeap (2005) kul 3.1. Tipi Ad En iyi Gerilimi
Mercury anahtar 70 ps 300 V Max DTF=200 Hz
transistor Darbe 150 ps 12 V 25 ps 100 ps 0.25 V 1.0 V SRD 60 ps 100 ps 200 ps 20 V 50 V 200 V Ani darbe 400 ps 125 V
dir. Zhang ve ark. (Zhang ve ark., 2011) ve Luo ve ark. (Luo ve ark., 2012)
edinilebilir.
SRD diyod
S
darbe
. er ve l daki kaynaklara Moncunill-Geniz Liu Wei ve ark., (2013) 3.2.1. gelmektedir (Oppermann ve ark., 2005). Kim ve ark. (20 Paulino ve ark. sahiptir. ik
Dhieb ve ark. (2010) t Gaussian
sonucu 244 Strackx ve ark. (2013) . Mahanty 3.2.2. 3.2.2.1. Yan ve ark. (2005) , kHz darbe tekrarlama a resi 76 Yan ve ark. (2006) a kHz darbe ve 50 ikte alan Ai-min reteci
Zhang ve ark. (2011) yeni bir
-9.096 V genlikte, Gaussian darbe olarak rapor
gen Tang ve ark. (2012) -bir darbe -4.47 V Shi ve ark. (2015)
Erwin Otto Marx) devre
Li ve ark. (2015
. Omurzakov ve ark. (20
(Omurzakov ve ark., 2016). Zhou ve ark. (2016)
3.2.2.2. Di leri Han ve ark. (2002) Gaussian Barrett Liu ve ark. (2 Han ve Nguyen Zhang Han -.
Choi Oh verici ta Li ve Ye ve a Xia Xu ve ark Xiao
Kamal an darbe 130 ps Valizade ve ark. (2016) 3.2.2.3. Diyot ve transis Prokhorenko (1997)
ns darb resine sahip sinyal
Jianming ve ark
Ren reteci Zhu ve ark. ( Protiva ir yap -Ameri ve ark Pongsoon ve ar Orlenko
-Xia
Testin fark
Xia kleri yeni nanosaniye
ve -15 Liu
Zhou ve ark.
4. 4.1. O ve Bilgisayar ben on CMOS seviyesinde yapabilmek 4 (ADS, 2015). il 4.1
4.2.
Darb
anahtarlama) ve depolama enerjis
(Jeong ve ark., 2005)
4.2.1. Transist r ile anahtarlama y
4.2.1.1. Anahtarlama devresi
ilir. 4
(Kit, 2005).
dunda
Ic = 0A ve (2) VCE = VCC
durumda (1) VCE = 0V ve (2) IC= VCC / Rc.
bir anahtar olarak modellenebilir.
4.2.1.2.
atikte bu belli bir
4.3 , yukarda verilen devrenin transistor
zaman tr t2 -t1
tf t4 -t3
fT 1/5 fT ir.. ) terimiyle ifade edilebilir: ) /( fT 1 2 (4.1) = tr tf (4.2) Denklem (4
4.2.2. Diyot ile anahtarlama
PN
4.4 Ters-toparlanma an lir: 0 r R d V V V (4.3) Denklemde, VR=Ir.Rr ters-kutuplama Ir r r d r R V V I (4.4)
elde edilir. Anaht
ters-ilir. r d V V r r r R V I (4.5) - enklem (4.5) on kapasitesi Ir
-kutuplama gerilimi, ters-kutuplama
Geri- Ir, 0+ s ts
-tutma storage time -tutma
-4 . 4.5 - ts - P+N jonksiyonun -r f f po s I I I t erf (4.6)
denklemi ile belirlenir, burada erf(x) hata fonksiyonu (Error Function) olarak bilinir. -biriktirme zama r f po s I I t ln 1 (4.7)
denklemi ile de elde edilebilir .
sonraki, t ts toparlanma (recovery -hal
geri-geri- Decay time) t2, f r po po po I I t t t erf exp 1 0.1 2 2 2 (4.8) turn-off time) ts ve t2 . 4.3. Darbe nten 4.3.1. iletim olarak kil 4 iletim hatt r, dielektrik .
4.6 . Liu ve ark. (2005) 4 4 4.7a
4.7b devrenin (Protiva ve ark., 2008) 4 4 4.8a 4.8b
ge
Zhu ve ark. (2010) rimli sinyal simetrik
4.3.3. Mi devresi Xiao ve ark. (2013) 4 Gaussian li li 4 ssian 4.9a
4.9b T
4.3.4.
Serres ve ark. (2006) ile Ha
4 4
4.10b T
4
schottky diyot, s
4
4.11b T 4.4. 4 R gerilimi 0 R s t IR s
4.12a PN diyot 4.12b SRD 4.4.1. at Protiva ve ark. (2008) dalga
Orlenko (2012) Ameri ve ark. (2011) Xia ve ark. (2013) 4.4.2. (Han ve Nguyen, 2005) 4 4 pa n 4.13a 4.13b 4.4.2.1. Devreye seri SRD
if keskin bir darbe
4.14 SRD)
4
4.4.2.2.
muna
Serres ve ark. (2006) 4 devre
Serres ve ark. (2006)
4 (Serres
ve ark., 2006).
4.17 Gaussian darbe
4
(Li ve ark., 2011).
Han ve ark. (2002) 4 . 4.19 Gaussian 4.4.2.3. Devreye Zhu ve ark. (2010) 4 4
4.21 Paralel SRD ile Gaussian
4 -VDC
4 (Zhu
ve ark., 2010).
4.23 Paralel SRD ile Gaussian schotky diyot, i 4 4.24 Gaussian Protiva ve ark. 4
4.25 Paralel schottky, iletim hat Gaussian
(Ameri ve ark., 2011) ve (Xia ve ark., 2013) Ameri ve ark. (2011)
4
ygulanan devrede
4.26
4.27
Xia ve ark. (2013)
4.28
4
4.29
lim r.
tir. ler ile ve diyot ile da k k halin o kadar derin sinyalin (Lee ve Nguyen, 2001). 5.1.
5.1.1. Transist r ile darbe
Bipolar t
lir (Li ve ark., 2016).
Li ve ark., (2016) Omurzakov ve ark., (2016)
VCC (besleme gerilimi) VCEO VCBO
B = IB1 . Sabit 1
tif darbe tetiklemesi ile IB B2 1
-C ikincil
delinme C
mekte (Li ve ark.,
2016) 5.1 e
5.1
VCBO = 40 V, VCEO
VCC
5.2
erden elde edilebilmektedir. Devre baz 1PS76SB21
schottky diyot ile
ttky diyot sayesinde birden fazla 5 5.4
5.3
5.4b devresi darbesi 5.1.2. Diyot ile darbe
(Yilmaz ve Tekin, 2006) . dielektrik sabiti r -(Pengju ve ark., 2012). Denklem 5.1 e H hedeflenen derinlik,
L
2
H
L (5.1)
dielektrik sabiti r (13.5) Denklem 5.2 e 1.5 GHz band 2.7 cm olarak hesaplanabilir (Demet S. . r H c BW 2 (5.2) (Yeap, 2005) Tt 5.3 e fout out t f T 1 (5.3) Tt (Junction capacitance) cj 5.4 xc cj kapasitans c out j x f c 2 1 (5.4) Diyot ters seviyesindeki gerilime direnme
in f 10 (5.5) cj0 Vbr -edilebilir). (Yeap, 2005). 5.1.2.1. SRD ve gecikme
Han ve Nguyen, (Han ve Nguyen, 2006)
5.5 5.6 a
5.5
5.6 si
5.7b
5.1.2.2.
Protiva ve ark., (2008) Protiva
ve ark., (2010) ar sonucu belirlenen SRD rbe ile -5.8 5. 5.10 a de 5.8
5.9
5.10a
5.2.
5.1 de
0.244 ns darbe sahip 0.48 V darbe Gaussian sinyal
(2010) sinyal darbe ge , 0.38- 8 ereceden an 5.1. Darbe (ns) Darbe (V) (Gaussian) Darbe Tekrarlama (MHz) (Kim ve ark., 2006) 0.38-0.4 1.8 li 10 (Paulino ve ark., 2008) 0.7-3.5 0.7 5 (Joo ve ark., 2009) 3.36-4.56 0,3 3-10 (Dhieb ve ark., 2010) 0.244 0.48 400
(Strackx ve ark., 2013) 0.67 1.24 evrimli 100
(Mahanty, 2014) 0.97 0.2
-Kim ve ark. (2006 da
devrede voltaj denetiml -Voltage Controlled Delay Line)
tek erde uygulanabili
Dhieb ve ark. (2010) 0. kullanar Gaussian 5 V (n-Channel MOSFET) teknolojisine sahip 5.3. seviyelerinin
halinde , darbe gen 5.1.1. En y akat 5.2 (2015) V gerilime sahip, 6 Gaussian . 5.2. Darbe (ns) Darbe (V) (Gaussian) Darbe Tekrarlama (kHz)
(Yan ve ark., 2005) 5 76 Gaussian 400
(Paulino ve ark., 2008) 10 50 Tek 300
(Ai-min ve ark., 2010) 3.4 666 10
(Zhang ve ark., 2011) 0.243 9.096 20x103
(Pengju ve ark., 2012) 1.14 13.2 Gaussian 10x103
(Luo ve ark., 2012) 1.2 14
-(Mandalanka, 2013) 11 4.47 Gaussian 3
(Shi ve ark., 2015) 2 400
-(Li ve ark., 2015) 6 2.5x103 Gaussian 10
(Zhou ve ark., 2016b) 0.9 25.2
(Omurzakov ve ark., 2016) 1.5 150 100
5.1.2. 5 5.3. Diyotlu a Darbe (ns) Darbe (V) (Gaussian) Darbe Tekrarlama (MHz) (Han ve Nguyen, 2002) 0.3 0.2 10
(Rulikowski ve Barrett, 2004) 0.5 1.6 Gaussian 6
(Liu ve ark., 2005) 0.3 0.17 Gaussian 0.1
(Han ve Nguyen, 2005) 0.3 6 Gaussian 12
(Zhang ve Fathy, 2006) 0.3 1.6 li 10
(Han ve Nguyen, 2006) 0.4-1.2 6-9 Tek evrimli 10
(Yilmaz ve Tekin, 2006) 0.5-2.4 0.3 20
(Serres ve ark., 2006) 0.27 1.7 100
(Choi ve ark., 2011) 0.33 8.6 12,2
(Oh ve Wentzloff, 2011) 0.21 1.6 Gaussian 10
(Li ve ark., 2011) 0.37 1.3 li 10
(Ye ve ark., 2012) 1 8 li 2
(Xia ve ark., 2012) 1 4 li 10
(Xu ve ark., 2012) 0.6 1.8 li 1x10-3 ile 10
(Xiao ve ark., 2013) 0.8 1.2 li
-(Venkatachalam ve ark., 2014) 0.4 0.6 Te li 1-100
(Valizade ve ark., 2016) 0.51 0.47 Gaussian 10
(Valizade ve ark., 2016) 0.66 0.43 10
(Zhou ve ark., 2016a) 0.13 3.3 Gaussian
-0.7 36 Gaussian 10
0.5 40 Gaussian 10
Devrede bir
5.1.1. 5 Protiva ve ark. (2010) . 5.4. Darbe (ns) Darbe (V) (Gaussian) Darbe Tekrarlama (Prokhorenko, 1997) 12 500 20x10-3 (Jianming ve ark., 2006) 0.4 15 5
(Wu ve Tian, 2007) 1.81 53.6 Gaussian 300x10-3
(Protiva ve ark., 2008) 0.5 25 20
(Ren ve ark., 2010) 1-2 30-58 500x10-3
(Zhu ve ark., 2010) 0.6 5 500x10-3
(Protiva ve ark., 2010) 0.11 7.5 Gaussian 5
(Ameri ve ark., 2011) 0.14 25 Gaussian 10x10-3
(Pongsoon ve ark., 2012) 1.87 2.16 Gaussian 1
(Orlenko, 2012) 2 140 Gaussian 0,5
(Xia ve ark., 2013) 0.33 47.2 Gaussian 0,5
(Xia ve ark., 2014) 3.2 76 li 1 - 10
(Guo ve Zhu, 2014) 0.35 3.1 Gaussian 1
(Liu ve ark., 2015) 0.4 8.3 Gaussian 1x10-3ile 1
(Zhou ve ark., 2015) 0.3 1.88 10
(Zhou ve ark., 2016a) 0.13 3.3
6 6.1. irim YNR sistemlerinde . n . elde edilen , . . (2010) .11 ns e ve 7. . Bu devre (SRD) ve ( ) ilebilir. (2015) ns olup
k isteniyor ise SRD ile 6.2. benzetim faydalanabilirler. .11 imlerin tepiti 2500 sunda benzetimleri rilebilir. ir. Benzetimi edilmelidir. RF PCB teflon pcb lme
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: Ahmet YILDIRIM : : Ankara 1987 Telefon : 05553456139 Linkedin : https://www.linkedin.com/in/ahmet-yildirim-6446a874 e-mail : ahmet-yildirim@hotmail.com Derece Lise : 2004 : 2008 : , Konya Kurum 2007-2009 Rehber 2011(6 ay) emleri 2011-2013 2013-2015 BIYOMOD Biyomedikal UZMANLIK ALANI Kontrol Sistemi (PIC16F serisi mikrodenetleyici)
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