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The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

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Fig. 1. 4H-SiC substrates’ surface morphology of (a) as-received substrate (orientation 81 off-axis), (b) 8E, (c) 8SIE, (d) 0E and (e) 4E, after surface preparation (scan size:
Fig. 2. Surface morphology of a GaN grown on: (a) 4H-SiC 81 off-axis (8E) and (b) 4H-SiC 01 off-axis (0E)

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