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Low temperature grown GaAs based resonant cavity enhanced photodiodes

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Figure 2.1: Diode structure and energy band diagram under reverse bias.
Figure 2.2: Distribution of dopant-ion charges, electric field and voltage for a  p-i-n photodiode under reverse bias
Figure 2.3: a) The induced current as a function of time, where photogeneration  took place only at the sheet in the active region
Figure 2.4: Schematics of photodiode circuitry under reverse bias (a) and  equivalent high-speed model for frequency analysis (b)
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