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High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes

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Figure 1. Epitaxial layer structure of the designed AlGaN RCE Schottky PD.
Figure 2. Measured and simulated spectral reflectivity of the RCE-PD wafer.
Figure 8a. The area dependence of pulse responses measured at 357 nm. (a) Au-Schottky RCE-PD
Figure 11. Normalized pulse responses of 30  µ m-diameter Au and ITO-Schottky RCE-PDs with 77 ps and 154 ps FWHM respectively

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