ContentslistsavailableatSciVerseScienceDirect
Applied
Surface
Science
j o ur na l ho me p age :w w w . e l s e v i e r . c o m / l o c a t e / a p s u s c
Growth
of
vertically
aligned
carbon
nanotubes
over
self-ordered
nano-porous
alumina
films
and
their
surface
properties
Kuldeep
Rana
a,
Gokce
Kucukayan-Dogu
b,
Erman
Bengu
a,∗aDepartmentofChemistry,BilkentUniversity,06800Ankara,Turkey
bInstituteofEngineeringandScience,MaterialsScienceandNanotechnologyGraduateProgram,BilkentUniversity,06800Ankara,Turkey
a
r
t
i
c
l
e
i
n
f
o
Articlehistory:Received27January2012
Receivedinrevisedform31March2012 Accepted2April2012
Available online 6 April 2012
Keywords: Anodization Porousaluminafilm Chemicalvapordeposition Carbonnanotube Contactangle
a
b
s
t
r
a
c
t
Nanoporousanodicaluminumoxide(AAO)withself-organizedarraysofuniformnanoporeshavebeen usedforvariousapplicationsinthefieldsofsensing,storage,separationandtemplate-basedfabricationof metalnanowires,carbonnanotubes,oxidesandpolymers.Theworkpresentedhereinvolvesthe produc-tionanduseofAAOtemplatesforgrowthofalignedmultiwalledcarbonnanotubearrays.AAOtemplates wereformedbyelectrochemicaloxidationofaluminumindifferentelectrolytesolutionscontaining sul-furic,oxalicandphosphoricacid.SEMwasusedfortheanalysisofthesurfacemorphologyoftheAAO films.Theporousstructureswithporesizeintherangeof25–120nmwereobserved.Poresizeswere correlatedwiththetypeofacidicsolutionsusedastheelectrolyte.Finally,AAOsurfaceshavebeenused assubstratesforthegrowthofverticallyalignedcarbonnanotubesthroughchemicalvapordeposition technique,whichshowedsuper-hydrophobicbehaviorasconfirmedbycontactanglemeasurements.
© 2012 Elsevier B.V. All rights reserved.
1. Introduction
Variousnanostructurebasedmaterialsarealreadyfinding appli-cationsintheindustry,suchaselectronicdevices[1],biosensors [2],photonics[3],materialsforenergystorage[4]andas separa-tionmembranesforbio-materials[5].Anodizedaluminumoxide (AAO)templatebasedsynthesishasbeenemployed[6]asoneofthe well-knownproductiontechniquesenablingcontrolof morphol-ogy,patterningandsizeofnanomaterials.Throughitsporesize, densityanddistribution,AAOtemplateshavesignificantinfluence onthefinalpropertiesofthenanostructuredmaterialsandthusthe variousstructuralpropertiesofnanomaterialscanbeengineeredby these“knobs”[4].
Discoveryofself-orderedAAOmembraneswasfirstreported byMasudaandFukuda[7–9],which,havegrownby electrochemi-caloxidationofaluminum(Al)andusedinnumerousapplications in thefollowingyears [8].Thestructure ofporousaluminacan bedescribedasaclose-packedarrayofcolumnarcells,each con-taining a central pore of which the size and interval can be controlledbychangingthesynthesisconditions[10].AAOwitha hexagonalarrangementstableathightemperaturehasbecomea populartemplatesystemforthesynthesis ofvariousfunctional nanostructures[5,11,12].Furthermore, AAOfilmsfind potential applicationsindiversefieldsashighdensitymagneticstorage[13],
∗ Correspondingauthor.Tel.:+903122902153;fax:+903122664068. E-mailaddress:bengu@fen.bilkent.edu.tr(E.Bengu).
DNAtranslocation[14]andintribologyascoatingswithcontrolled lubricantreleasereservoirs[15].Recently,anodizationofAlfilms depositedonmetalorsemiconductorsubstratesarealsostudiedto fabricatenanostructuresonsubstratesusingtheporousAAOfilm asamask[16].
Thesynthesisofself-organizedorderedstructuresbyanodizing ofAlhasbeenwidelyreportedfromoxalic[7,10,17],phosphoric [5,18]andsulfuricacidsolutions[19,20].Athickandporouslayer ofaluminumoxide(upto200m)canbeformedbyanodization inadiluteacidicsolution.Bytheapplicationofapotential differ-encebetweentheelectrodes,hydrogenionsarereducedtoproduce hydrogengasatcathodesurfaceandAlisoxidizedintoAl3+.A
por-tionofthecationsisdissolvedintheelectrolyteandtherestforms anoxidelayeronthemetalsurface.TheporestructureofAAO(size, densityanddistribution)canbecontrolledbychangingthevoltage, currentdensityandacidconcentrationinthebathduringprocess [21].
Some ofthe studieson AAO filmsproduced by themethod outlinedabovearetargetingapplicationsrelatedtotheusageof AAO ordering as template for the growth of carbon nanotube (CNT)arrays[22],nanowiresandpatternedstructures[23].Besides, inducingapattern,AAOtemplateswithCNTsmightbeusedalsoas hybridstructures.SimilarAAO/CNThybridstructureshavebeen showed tohavepotential inthe following applicationssuchas membrane[24],catalystsupport[25],drugdelivery[26–28]and fieldemitters[29].
The mainaimofthepresent workis tocontrol ofpore size anddistributionoverAAOlayersbychangingtheelectrolytebath 0169-4332/$–seefrontmatter © 2012 Elsevier B.V. All rights reserved.
poresize controlof AAOfilmswhich couldenabletheiruseas suitabletemplatesforcompositeAAO/CNTstructures.
2. Experimentalprocedure
Alfoilsof300mthicknesses(99.9%,Merck)werecutin rectan-gles(70mm×15mm)andthenannealedunderinertatmosphere at 450◦C for 5h. The annealed Alfoils werewashed with ace-toneanddoubledistilledwaterinordertoremovedirtandthen driedusingdryairblower.Thebacksurfaceandtheedgesofthe sampleswerecoveredbytheinsulatingtape.Theanodizationof thesesampleswerecarriedoutbyatwo-stepanodization proce-dureunderconstantcellvoltagesof25V,40Vand100Vforthree differentelectrolytesolutionbaths(sulfuric,oxalicand phospho-ricacid,respectively)atthetemperatureof10◦C.Theelectrolyte bathswerekeptovermagneticstirrerforcontinuousstirringof solutiontomaintaintheuniformconcentrationinthebathduring theanodizationstep.After60minoffirstanodization,initial alu-minumoxideformedonAlfilmwasremovedbychemicaletching inamixtureofphosphoric(6wt%)andchromicacid(1.8wt%)at 70◦C.Immediatelyfollowingtheoxideremovalstep,Alfoilwas re-anodizedfor 2hunder identicalconditions usedforthefirst anodizationstep.AnodizationofAldepositedovertheSi(100) sub-stratewasalsocarriedoutinanidenticalmannerasusedforpure Alfoils.
Co–Alcatalystsolution(5mmol/L)waspreparedbydissolving Al(NO3)3·9H2OandCo(NO3)2·6H2Opowdersinethanol(Co–Alat
1:1)forCNTgrowth.ThecatalystlayerwasappliedonAAO sur-faceseitherviadrop-wisemethodorviadippingmethodusingthe preparedcatalystsolution.Inthedrop-wisemethod,20L/cm2
ofCo–AlbasedcatalystsolutionhasbeendroppedovertheAAO surfacesandthesurfacesleftforairdrying.Inothercatalyst applica-tionmethod,AAOsurfacesweredippedintothecatalystsolutionat 50◦Cfor15minandleftforairdrying.TheAAOsurfaceswithCo–Al catalystloadedtotheCVDchamberforCNTgrowthprocess.The reductionstepproceededunderH2andAratmospheres(flowrates
20sccmand150sccm,respectively)at600◦Cfor15min.Following thisstep,theCNTgrowthwasperformedatthesametemperature andgasmixtureswithpureethanolasacarbonsourcefor30min. ThealignedCNTshavebeengrownovertheAAOsurfacesbyCVD at600◦Csimilartoourprevioustechnique[32].
ThestructuralcharacterizationofAAOnanostructureswas per-formedbyusingaCarl-ZeissEVO40scanningelectronmicroscope (SEM).Thecontactanglemeasurementshavebeencarriedouton thesesurfaces(DataphysicsOCA 15plus). Thesynthesized car-bonaceousmaterialoverAAOsubstratewascharacterizedbyusing differentcharacterizationtechniquessuchasSEM,contactangle measurementandRamanspectroscopy(HoribaJobin-Jvon-532nm wavelength).
3. Resultsanddiscussion
TheoxidationofAlduringanodizationprocesshasbeen mon-itoredbythemeasuredoxidationcurrentversustimeasshown inFig.1.Themeasuredcurrentbetweenelectrodesishigherat
ofpureAlmetal.ThiscurrentdecreasessharplyfrompointAto
pointB,whichisattributedtotheformationofaluminumoxide
barrier layeronthesurface which alsoindicatestheformation
ofnanopores.Thereisaslightincreaseinthecurrentfrompoint
BtopointCduetothedecreasingthicknessofthebarrierlayer
whichiscausedbytheincreaseinporedepthasshowninFig.1.
BeyondpointC,equilibriumisestablishedbetweenthecompeting processesofoxideformationanddissolution(poregrowth). Real-timeoxidationcurrentvs.timedatacanbeusedtocontrol/tunethe oxidationperiodandconsequentlytoengineerporegeometry,e.g. poredepth.Maincharacteristicsofthisbehaviordonotvarywith thetypeofelectrolytebathused.
Fig.2 shows the SEMimage of top portionof theanodized Alstripspreparedwiththreedifferentelectrolytesused(sulfuric, oxalicandphosphoricacid).Fig.2ashowsSEMimageofAAO syn-thesizedusingphosphoricacidastheelectrolytewhichshowsa uniformporedistributionalloverthesurface.TheimagesfromSEM showtheporedistributionandtheirFastFourierTransforms(FFT) astheinsetsareshown.Theaverageporesizemeasurementshave beencarriedoutonmultipleSEMimagesfromtheAAOsurfacesby employingthe“particle-sizeanalysis”optionontheImageJ soft-ware[31].ForFig.2a,theaverageporediameterisfoundtobe around100±25nm(mean±standarddeviation)seeTable1.The largevariationforporediameterscanbeattributedtothe pres-enceofhighsurfaceenergyregions,suchasmicro-scratcheson thesurfaceofasreceivedsamples,whereanodizationprocessis acceleratedresultinginlargerporediameters.Fig.2bshowsthe SEMmicrographofthetopsurfaceofAAOtemplatepreparedin oxalicacidelectrolytebath.Thetopviewofporestructureafter anodizationshowswell-orderedporestructure andtheaverage porediameterisfoundtobearound40±10nm.Theaveragepore diameterobtainedduetoanodizationinoxalicacidelectrolytebath
Fig.1. Typicalcurrentdensity–timecurveforanodizationprocessunder constant-voltagemodeatavoltageof40Vandina3wt%oxalicacidbath,maintainedat 15◦C.
Fig.2.SEMmicrographofAAOimageobtainedafteranodizationwithdifferentelectrolytesused:(a)phosphoricacid,(b)oxalicacid,and(c)sulfuricacid.(d)SEMmicrograph ofAAOoverSianodizedinphosphoricacidsolution.
issmallercomparedtothatobtainedusingphosphoricacidbath requiringahighervoltageforporeformation.Fig.2cshowsthe SEMmicrographofthesurfaceafteranodizationusingsulfuric elec-trolyte;anodizationhasbeencarriedoutat20Vforthissample. Theporesaredistributedinaregularhexagonalmannerwithan averageporediameter20±9nmascalculated.Theaveragepore diameterobtainedwithsulfuricacidissmallestamongallthree acidsusedfortheelectrolytebathinthisstudy.
Furthertoensureaconstantporedepthacrossoursample,a 400nmthickAlfilmhasbeendepositedoverSisubstratevia ther-maldepositionmethod.Thisfilmwasthenanodizedinphosphoric electrolytebath.Fig.2dshowstheSEMimageofAAOstructureover Sisubstrate,whichshowsthatAAOfilmwasdeveloped success-fullyandmaximumporedepthcanbecontrolledbycontrollingthe thicknessofdepositedAllayer.Suchfilmswithtunedporedepths canbeusedforelectronicapplication.
Theporeformationoccursduetoelectric-fieldassistedoxide dissolution. Atthis stagethecurrent beginstoincrease, due to decreasein resistanceasoxidelayerthicknessreducesin front oftheinitiatingpores.Thecurrentstableswhenadynamic equi-librium is established between the competing mechanisms of aluminum oxide growth and its partial dissolution leading to pore formation at the surface [33]. Initially an irregular array ofpore structuresformonthesurface astheporesarecreated randomlyonthe sample. However,due tothe repulsiveforces betweenneighboring poresa self-organizedpore array eventu-allyforms.Themechanicalstressassociatedwiththeexpansion oftheAlduringoxideformationiscitedasthecauseofrepulsive forcesbetweenneighboringporeswhichleadstoself-organization [10].
We investigated theself-organization behavior of the pores usingtheFFTimagesprovidedastheinsetsofFig.2.TheFFTimages werecalculatedfromtherespectiveSEMimagesusingImageJ soft-ware[31].Threedifferentpatternsforporesareobservedthrough theexaminationoftheFFTimages.TheFFTimagesofanodized samplesin phosphoric and oxalic acidsshow sixdistinct spots formingahexagon(Fig.2aandb).Thisobservationindicatesa sin-gledomainofwell-ordered,long-rangeperiodic2-Dlatticeformed
bythepores[34].TheFFTimageofanodizedsurfaceinsulfuric acidshows a ring shape form(Fig.2c). Thissuggests the pres-enceofimperfectionsintheperiodicityofthesurfaceandmultiple domainsofordered2-Dlatticeofpores.AsshowninFig.2d,theFFT imageindicatesadiffuseringforthecaseofAAOoverSisample preparedwithphosphoricacidwhichrevealsthepresenceof dis-ordereddomainsonthesurface.Intheliterature,Sulkaetal.[34] concludedthathighstressesonthesurfaceofAlcandestroythe long-rangearrangementofporesandhence,theexactmechanism ofporeorderingisstillopenfordebate.Accordingtothis,multiple domainformationontheanodizedsurfaceusingphosphoricacid mightbeduetothepresenceofnon-homogenousdistributionof stressesintheAlfilmdepositedoverSisubstrate.
Asmentionedearlier,insomecasespreparationof nanostruc-turesusingporousAAOastemplatesinvolvestheintroductionof dissolvedmaterialsintotheporesofthemembranes.Onewayto determinewhetherthedissolvedsolventsaregoingtofillinthe poresistoinvestigatethewettingbehaviorofcommonsolvents on theAAO surfaces.Hence, we investigatedthe contact angle ofwaterontheseAAOsurfaces.Thecontactanglemeasurement showsthatallthreesurfacesarehydrophilicinnaturewith ini-tialcontactanglesare59◦,44◦and57◦respectivelyforAAOsheets anodizedinsulfuric,oxalicandphosphoricacidasshowninFig.3a. Twodifferentvalueofcontactangleshavebeenobservedattwo endsofdroplet,whichshowsthatsurfaceenergyisvaryingregion toregionofAAOsurface.Contactanglevaluedecreaseswithtime andafter5minwemeasured22◦,22.7◦and40◦respectivelyfor sul-furic,oxalicandphosphoricacidsasshowninFig.3b.Thedecrease incontactanglesinallthreecasesafterafewminutesisduetothe seepingofthewaterdropintoporesofAAO.WettingofAAOshas beenexplainedasfollow;ifaliquidisallowedtospreadonthepore wallsofAAOs,firsttheliquidisbroughtintocontactwiththeAAO surfaceslow-energyliquidsspreadrapidlyonhigh-energysurfaces andthedrivingforcesinvolvedinthisprocessaredueto short-rangeaswellaslong-rangepolarinteractionsbetweenthewetting liquidandtheporewalls[35].Afterwettingthewallsofnanoholes, thewaterdispersedrapidlyintotheholeascontactangledecreases veryfastasshowninFig.3b.
Fig.3.(a)DemonstrationofsurfacewettingabilitybycontactangleofAAOinsulfuric,oxalicandphosphoricacidand(b)thegraphforcontactangleswithtimeontheAAO surfacesareshown.
ThefinalsectionofthestudyinvolvestheapplicationofAAOs asatemplatefortheverticallyalignedCNTgrowth.Thevertically alignedCNTshavebeengrownovertwodifferenttemplates:AAO andAAO/Sisubstratesanodizedinphosphoricacid.Fig.4shows theSEMimagesofCNTsgrownoverAAOsubstrate,inonecasethe catalystlayerwasappliedviadrop-wiseapplicationovertheAAO surface(Fig.4a)whileinothercasetheAAOsubstratedippedinto thecatalystsolutionfor15min.(Fig.4b).SEMimageofCNTsin Fig.4ashowsthatCNTsarenotaligned;insteadtheyaretangled witheachotherasshowninFig.4b.MostoftheCNTsareappeared onthesurfaceandveryfewarecomingfromtheporesofAAOin thedrop-wisecase.Thisshowsthatmostofthecatalysts parti-clesstayedonthetopsurfaceoftheAAOandveryfewpenetrated throughthepores.Fig.4bshowsthealignmentofCNTsgrownon AAOsubstrate inwhich catalysthasbeendepositedbydipping substrateintothevialcontainingthecatalystsolutionat50◦Cfor 15min.Theas-grownCNTsareapparentlystraightandparallelto eachotherformingadensesurfacewithtubeheightabout3m measuredfromFig.4b.ThegrowthofdenseCNTs(Fig.4b)indicates thatthecatalyststaysonthesurfaceaswellasitpenetratesinto theporechannelsforthiscase,whichmakesitclearthatthefinal CNTalignmentisaffectedbythemethodofcatalystdeposition.
CNTs were also grown on the well-ordered AAO template formedonSisubstrateandSEMimagesareshowninFig.5attwo differentmagnifications.CNTs areverydense, verticallyaligned
and distributeduniformlyallover theAAOsurface (Fig.5a).To demonstrateabetterviewforthealignmentofCNTsinside the template,across-sectionalSEMimageisshowninFig.5b.CNTsare indeedwellalignedandlengthsareveryclosetoeachotherabout 3mlong.TherootsoftheCNTsarelocatedatthebottomofthe poresasshowninFig.5b.Theseresultsconfirmthatbychanging theporedepth(throughcontrollingthethicknessofAllayerover Si),thecatalystsolutioncanpenetrateeasilyinsidetheporeand hencethegrowthofalignedanddenseCNTscanbeachieved.
FirstandsecondorderRamanspectraofCNTsgrownoverAAO andAAO/SisubstrateareshowninFig.6.ThefirstorderRaman spectrashowstwointensepeakswhicharewellknownasGand Dpeak(Fig.6a).TheGmode(TM–tangentialmode)corresponds tothein-planevibrationoftwoatomsinahexagonallattice.In ourstudy,thismodeislocatedaround1578cm−1and1584cm−1 respectivelyforCNTsgrownoverAAO/SiandAAOsubstrate.The D-band(disorderbandislocatedbetween1330and1360cm−1)is expectedtobeobservedinmultiwalledcarbonnanotubes (MWC-NTs), which is 1338cm−1 and 1348cm−1 respectivelyfor CNTs grownoverAAO/SiandAAOsubstrates.FirstorderRamanspectra ofCNTsaresimilarforbothsurfaces.
RamanfeaturesareanalyzedbyusingaLorentzianfittothe DandGpeaks.Theratioof integratedintensityof GtoD-band (IG/ID)givesthedegreeoforderinthecarbonaceousmaterial.IG/ID
ratiofortheCNTsgrownoverAAO/SiandAAOsubstratesare0.85
Fig.4. SEMimagesofCNTsgrownoverAAOsubstratesanodizedinphosphoricacidwherethecatalystlayerwasappliedvia(a)drop-wisetechniqueand(b)dipping technique.
Fig.5.(a)Topand(b)crosssectionalSEMimagesofCNTsgrownoverAAO/Sisubstratesanodizedinphosphoricacid.Insetof(b)showstheTEMimageofCNTs.
Fig.6.(a)Firstorderand(b)secondorderRamanspectraofCNTsgrownovertwodifferentsubstrates:AAOandAAO/Si.
and0.60,respectively.ThisshowsthatCNTsgrownoverAAO/Si substratearemoreorderedandlessdefectiveascomparedtothe CNTsoverAAOsubstrates.TheCNTsgrownoverAAOsubstratesare entangledtoeachotherandtwistedwhichcreatesmoredefectson CNTsurface,howeverinothercase;CNTsarestraightandparallelto eachotherandhavehigherIG/IDvaluewhichmeansfewerdefects.
SecondorderRamanspectraintheregionbetween2400cm−1and 3400cm−1 areshown inFig.6b,whichshowssharpand strong peakcenteredat2679cm−1and2689cm−1respectivelyforCNTs grownoverAAO/SiandAAOsubstrates.Thesepeakareassigned as2DorG-band(2700cm−1).Thisbandisanintrinsicproperty ofwell-orderedsp2carbons[36]andcloselyrelatedtotheband
structureofgraphenelayersincarbon.Ithasbeenreportedthat 2D-bandfurtherdownshiftsduetodisorderordefectspresencein carbonlattice[36].Theotherbandalmostatsimilarpositionaround
2922cm−1isrelatedtothecombinationofGandD-band(G+D)in carbonaceousmaterials[37].
ThewettingabilityoftheCNTsurfacesisanimportant prop-erty which is governedboth by the surface chemistry and the microstructureofthesurfaceincontactwiththesolvent[38,39]. ThecontactanglewasmeasuredforthetwodifferenttypesofCNTs; alignedforestlikeandentangledCNTsgrownoverAAO/SiandAAO substrates,respectively(Fig.7).TheverticallyalignedCNTsover AAO/Sisubstrateclearlydisplayasuperhydrophobicbehaviorwith acontactangleof180◦(Fig.7aandseeSupplementaryVideo)while theentangledCNTsgrownoverAAOsubstratehavecontactangle around163◦(Fig.7b).SimilarbehaviorwasalsoreportedbyWang etal.[40,41]inwhichthecontactanglevaluesmeasuredagainst waterforalignedCNTsoffewmicrometerslongandentangledCNTs were174◦ and144◦,respectively[42].Thecontactanglevalues
anassumptionmadebyPaveseetal.[42]whichstatesthat super-hydrophobicbehaviordependsontheactualcontactsurfacearea betweenthewaterdropandCNTs.Thus,inthecaseofvertically alignedCNTs,theactualcontactsurfaceareaisverysmalllimited tothetipsofCNTs.InthecaseoftheentangledCNTs,themeasured valueofcontactangleislower(163◦)becauseofthedisorderinthe alignmentoftheCNTswithrespecttothesubstratesurfaceandthe side-wallsofthemisalignedCNTsincreasingthetotalcontactarea.
4. Conclusions
Inthisstudy,wehavesynthesizedAAOtemplateswith differ-entporesizesusingvariouselectrolytebaths.Tounderstandthe wettability/porefillingbehavior,contactanglemeasurementshave beencarriedoutwhichshowhydrophilicnaturesofthesesurfaces. Thisresulthasa practicalimportanceshowingthatwater solu-blematerialscouldbeeasilyutilizedforfillingtheporousalumina templates. For instance, using ethanol based catalyst precursor solutions wewereable tosuccessfullygrowaligned and dense CNTforestsover both AAO and AAO/Sisubstrates.Such hybrid structurescombiningpatternedconductorandinsulatorarrayscan bepotentiallyappliedintheelectronicsindustryasstructuresfor buildinglightemittingdiodes,solarcellsandsupercapacitors.
Acknowledgements
G. Kucukayan-Dogu thank the Scientific and Technological Research CouncilofTurkey (Tubitak)for financial support.This workwaspartially supportedbyTubitak Projects109T026 and 107T892.
AppendixA. Supplementarydata
Supplementary data associated with this
arti-cle can be found, in the online version, at
http://dx.doi.org/10.1016/j.apsusc.2012.04.008.
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