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Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma

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Fig. 2. High-resolution B 1s scans obtained from Si surfaces, which have been exposed to 100 pulses of TEB at different temperatures.
Table I. Elemental Compositions and B/N Ratios Obtained from XPS Survey Spectra
Fig. 5. SEM images of ~47 nm thick BN thin film deposited on Si (100) substrate at 450 °C: (a) as-deposited, and (b) annealed.
Fig. 9. (a) Optical transmission, and (inset) absorption spectra of the ~47 nm thick BN thin film deposited on double side polished quartz
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