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Capacitance-voltage-frequency measurements of Al/Azure C/p type Si heterojunction

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CAPACITANCE-VOLTAGE-FREQUENCY MEASUREMENTS of

Al/AZURE C/p TYPE Si HETEROJUNCTION

Ikram ORAKa , Abdulmecit TURUTb

aBingol university, Faculty of Science and art, Phys. Dept., 12000, Bingol, Turkey bIstanbul Medeniyet University, Science&Art Faculty, Dept. Eng. Phys., 34730, Istanbul, Turkey

ikramorak@gmail.com

In this study, we fabricated Al/Azure C/p type Si heterojunction by thermal evaparation. Electrical characterization of the device was investigated and calculated some diodes parameters, such as ideality

factor (n) and barrier height (Φ).Capacitance –voltage and capacitance-frequency measurement of the

device were taken at room temperature 100 kHz-1000 MHz step by 100 kHz. As can be seen the figure, the device has been shown that the measure capacitance decreases with increasing frequency and capacitance decreases with decreasing voltage at room temperature.

- 1 . 2

- 0 . 8

- 0 . 4

0 . 0

0 . 4

0 . 8

V o l t a g e ( V )

6 0

7 0

8 0

9 0

1 0 0

1 1 0

1 2 0

1 3 0

C

ap

ac

it

an

ce

(

pF

)

2 0 0 k H z 1 0 0 0 k H z

A l / A z u r e C / p - t y p e S i / A l

 f = 1 0 0 k H z

- 0 . 4

- 0 . 3

- 0 . 2

- 0 . 1

0 . 0

V o l t a g e ( V )

7 6

8 0

8 4

8 8

9 2

C

ap

ac

it

an

ce

(

pF

)

Şekil

Figure 1. Capacitance-Voltage measurement of Al/Azure C/p- type Si heterojunction

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