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High Power CMUTs: design and experimental verification

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Fig. 3. comparison of the static deflections obtained from finite element  modeling (FEM) and the sPIcE model for thick plates (a = 300 µm, t g
Fig. 6. comparison of the normalized radiation resistance and reac- reac-tance of (top) a single capacitive micromachined ultrasonic transducer  (cMUT) cell and (bottom) a cMUT array of 7 cells with the RLC model  and actual values
Fig. 8. The center displacement of the plate for different t g  values under  a continuous 100-V peak 1.5-MHz sinusoidal signal (a = 298.5 µm, t m  =  130 µm, t i  = 100 nm).
Fig. 9. Fabrication steps: (a) conductive silicon wafer, (b) thermal oxi- oxi-dation, (c) lithography and oxide etching for cavities, (e) borosilicate  glass wafer, (f) lithography and glass etching for bottom electrode, (g)  Ti/au evaporation, (h) cleanin
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