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High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

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Academic year: 2021

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Fig. 4 (a) Cross-sectional TEM image  of epi-Ge layer selectively grown on  patterned SiO 2 /Si with 500nm SiO 2
Fig. 9 Ge n-MOSFETs process flow. Selectively grown epitaxial Ge (p-type:

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