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Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

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Academic year: 2021

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Fig. 1. TEM micrographs of samples with SiGeN thicknesses and annealing temperatures of samples with a) 3 nm (900  C), b) 6 nm (850  C) and c) 9 nm (900  C).
Fig. 3. Size distribution for multilayer structures with different thicknesses and related Gaussian fit
Fig. 3 shows size distribution for these three samples with different thicknesses. The NC size is referred to here is the NC diameter in the growth direction which is controlled via SiGeN thickness.
Fig. 5. PL spectra of samples a) ML3 and b) ML6 annealed at different temperatures c) Comparison of PL intensity of samples ML3, ML6 and ML9 annealed at 900  C

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