Influence of γ-irradiation on electrophysical properties of indium selenide

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The F ifth C onference “ N uclear Science and Its A pplication” , 14-17 O ctober 2008

INFLUENCE OF T-IRRADIATION ON ELECTROPHYSICAL

PROPERTIES OF INDIUM SELEMDE

1 T.B. TAGIYEV. 2 A .A . ISM A ILO V , 2 N .D . A H M ED ZA D EH , 2 M .M . SHERINOVA, 1F.P. A B BA SO V

lln stitu te o f R ad iatio n P roblem s, A zerbaijan N ational A cadem y o f Sciences 2Institute o f P hysics, A zerb aijan N ational A cadem y o f Sciences

E-m ail: alekper-size@ ram bler.ru

VAC in indium selenide and InS e+ 0.2'/S n, InSe+0.4X Sn before and a fte r y- irrad iatio n w hich approxim ates a t th ree areas w ere investigated. The first area is an ohm ic area, th e seco n d one is “arrester” q u ad ratic area, and the th ird one is the area o f sharp grow th. T he theory o f space charge restricted cu rren t (SC R C ) w as used for in terp retatio n o f experim ental results, w h ich is expressed as th e follow ing [1]:

H ere e 0 -d ielectric constant;

s

- d ielectric perm eability o f cry stal; 0 - trapping factor;

L-

th ick n ess o f crystal; ^ -charge carrier m obility;

V

- applied electric tension.

B efore irrad iatio n : trapping factor 0= 0.21; equilibrium co ncentration o f cu rren t c a rrie r P 0= lT O n sm*3; concentration o f ionizing centers V = 4-1012 sm '3, energy o f occurrence d ep th P f=0.41 eV and a fte r y -irrad iatio n (dose Dy=50 krad) th e follow ing resu lts w ere obtained: trap p in g factor 0=0.03; eq u ilib riu m concentration o f current carrier P o= 2.1-10losm"3; co n cen tratio n o f ionizing centers N t= 6-10u s n r3; energy o f occurrence depth P =0.3 5 eV.

The o btained resu lts authenticate th at decrease o f h ole concentration at low irrad iatio n doses is conditioned b y com pensation o f in itial levels b y acceptor type defects form ed b y donor lev els

S ection IV. A pplication O f N uclear T echnologies In Industry, M edicine A nd A g ricu ltu re

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The Fifth Conference “ Nuclear Science and Its Application”, 14-1' ober 2008

o f interstitial selenium. In com parison w ith “clean” crystals in im purity-containing crystals a fte r y-irradiation (dose up to Dy=50 krad) electrophysical properties d o n ’t change substantially. Reference

Lam pert M , M arc R Injection current in solids. Peace 1973. 416 p-s.