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Electric breakdown in polycrystalline semiconductors with highly nonlinear I-V characteristics: Simulations for simple barrier height models

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Electric Breakdown in Polycrystalline Semiconductors With Highly Nonlinear I-V Characteristics: Simulations for Simple Barrier Height Models

Article · November 1997 CITATIONS 0 READS 19 3 authors, including: Bilal Tanatar Bilkent University 237 PUBLICATIONS   2,277 CITATIONS    SEE PROFILE

All content following this page was uploaded by Bilal Tanatar on 25 December 2018.

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