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MICROSTRUCTURE AND EUTECTIC MORPHOLOGY OF AL-12.5°/o Si ALLOY REFINED WITH ANTIMONY

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SAlj. Fen Bilünleri Dergisi,

1

1.

Ci lt,

1.

Sayı,

s.

10-14, 2007

Investigation

Of

Microstructure And Eutectic

Morphology Of Refined

Al-12.5o/o

Si Alloy

F. I(ahranıan

lVIICROSTRUCTURE

AND

EUTECTIC MORPHOLOGY O

F AL-12.5°/o

Si

ALLOY

REFINED

WITH ANTIMONY

Funda KAHRAMAN , Mustafa Kemal KULEKCl

Mersin University, Facu]ty of Tarsus Technical Education, 33480 Tarsus 1 TURKEY

ABSTRACT

Modification of Al-Si cast alloys can be achieved in two different ways, namely by additions of certain eleınents or

with rapid cooling rate. Modifications of the Al-Si al1oys are carried out extensivcly in industry to improve the

mechanical properties, particularly ductility.

In

this study, the effects of antiınony addition.s and growth rate on the

ınicrostructure and eutectic morphology on the directionally solidified Al-

1

2.5°/o

Si cutectic all oy has been

investigated. The results showed that antimony can be identified as a grain refıner. Over modification occurs in

Al-12.5

°/oSi alloy when modifier is present in the amount of

1

%Sb results in AISb compound.

Key Woırds:

Al-Si alloys, dendrite , flake ,microstructure, modification

ANTİMUAN İLE iNCELTİLMİŞ

AL-12.5 °/o

Si

ALAŞIMININ

MİKROYAPI

VE ÖTEKTİK MORFOLOJ.İSİ

ÖZET

Al-Si döküm alaşın1larının modifikasyonu, bazı elementlerin ilavesi veya

yüksek soğutma hızı ile

gerçekleştiriln1ektedir. Al-Si alaşımlarının ınodifikasyonu, mekanik özellikleri geliştirmek ve özellikle sünelcliği

arttın11ak için endüstride geniş çapta uygulanmaktadır. Bu çalışmada, yönlendirilerek katılaştırılınış Al-%

12.5

Si

ötektik alaşımının, mikroyapi ve ötektik morfolojisine, antimuan ilavesinin ve büyüme hı7ının etkisi araştırılmıştır.

Sonuçlar, antiınuanın bir tane İnceltici olarak kullanılabileceğini göstenniştir. Al-% 12.5 Si ötektik alaşımına, %1

oranında antimuan ilave edildiğinde aşırı nıodifikasyon meydana geldiği ve AlSb bileşiğinin oluştuğu tespit

edilmiştir.

Anahtar Kelimeler:

Al-Si alaşımları, dendirit, fleyk, mikroyapı, modifikasyon

I. INTRODUCTION

The tribological and n1echanical properties of Al-Si

alloys have led to extensive use of these alloys in the

ınarine , electrical , autoınobile and aircraft industries

where it is used for cylinder blocks and heads, plain

bearings, internal combustion engine pistons and

cylinder liners. Al-Si alloys are important for the

alun1inium easting alloys, mainly because of high

fluidty, lo w shrinkage in casting, high corrosion

resistance, go o d v1eldability, easy brazing and lo w

coefficient of thennal expansion. The

Al-Si

alloys are

often used in the manufacture of thin walled and

complex-shaped parts for which high strength is not

requirement [1]. The mechanical properties of Al-Si

cast alloys depend not only a chemical coınposition

but, more importantly, on microstructural features such

10

as ınorphologies of dendritic a-Al, eutectic Si flakes

and

other in termeta Ili es that present in the

microstructure [2,6].Modified Al-Si alloys give better

mechanical properties than unmodified alloys [7).

Modification of Al-Si alloys froın a flake - like to a

fine fibrous silicon stnıcture can be achieved in two

different ways, by additions

of certain elements

(ch emical ınodification) or w ith a rapid cooling ra te

(quench modification) [8]. Cheınİcal n1odification can

be made by several e]eınents such as Sr, Na and Sb ete.

Sr and Na changes silicon fron1 coarse flake-1ike to a

fine fibrous structure, Sb causes a refinement in the

flake-like silicon structure [9-

1

2]. The ınodifıcation of

Al-Si alloys with antimony is a widely used process in

industry. In this process the antiınony is a permanent

constituent of the all oy. Refining effect of the antimony

is completed independently from holding time,

(2)

SAÜ. Fen Bilimleri Dergisi, ll. Cilt, 1. Sayı, s. 10- 14, 2007

melting, degassing with hexachloroethane fluxes which can not be used with sodium or strontium. Degassing with hexachloroethane prevents the porosity formatian in the casting. These shortcomings are substantially

eliminated when antimony is used. Antimony based alloys are distinguished by their very low susceptibility to gassing and excellent easting properties [1

].

Addition of other alkali, alkaline earth, rare earth elements have also been reported to cause modification of Al-Si alloys

[8].

In present study, the effects of antimony additions and growth rate on the microstructure and the eutectic morphology on the directionally solidified alloy has been investigated.

II. EXPERIMENT AL PROCEDURE

AI-12.5

o/o

Si alloy was produced from high pure Al

(99.999

%) and Si

(99.99

%). Pure antimony

(99.98

-%) was used as modifying agent. lt was added to molten Al-12.5 % Si alloy at different amount such as 0.1 %, 0.2 %, 0.5 %, and 1%. The samples which were used in experimental studies were taken from modified and unmodified easting alloys. The solidifıcation conditions for modified and unmodified materials were same; growth rate (R)=2E-3 - 5E-2 cm ls and temperature gradient (G)= 10-50 °C/cm. For microstructure examines the samples were ground, polisbed and etched according to standard metallographic techniques. The microstrucrures of the modified and unmodifıed alloys were studied using optical microscope (OM) and scanning electron microscope (SEM). Microstructural evolution studies were carried out on cast samples, by investigation the morphological change of the Si phase and a-Al phase with modifıcation effect of Sb. The effect of growth rate on microstructure and eutectic rnorphology was also investigated. Linear intercept method was used to identify the distance between interflakes, and the distance between secondary dendrite arms. The photographs of the microstructure were taken from the centre of the samples, to prevent the variations in microstructure, caused by high coo 1ing ra te.

III. RESULTS and DISCUSSION

The microstructure of the unrnodifıed Al-12.5 % Si alloy was a typical mixture of coarse silicon flakes, primary silicon crystals and a-Al dendrites as seen in Figure 1. Non-uniform dispersion of a-Al phase was observed in the microstructure of unmodified alloy. Addition of 0.1 % Sb resulted in increase, in the amount of dendritic a-Al phase as seen in Fiqure 2. The addition of the 0.1 % Sb alsa makes a.-Al phase more columnar and slender.

ı ı

lnvestigation Of Microstnıcture And Eutectic Morphology Of Refıned Al-12.5% Si All oy F. Kahraman

', ' .. � •• · ·. : . .. ;V )f•

Figure

1. The microstructure of unmodified Al-12.5 %Si alloy (X

1 00)

The distance between secondary dendrite arms is decreasing with the increase Sb amount in the alloy as seen in Figure

3.

Addition of Sb red uc es the distance between interflakes. The highest reduction rate in the distance w as obtained from

O .ı

%Sb addition as see n in Figure 4.The experiments showed that increase in the amount of Sb over 0. 1

o/o

does not change the distance much more.

Figure

2. The effect of 0.1 % Sb addition on the formatian of dendritic a-AJ ph as e (X 1 00)

e s

:1. '--' � o.J ·-� "'

5 3

"' c 4) 'O

§

2 o 4) en

o

1 o .D o o c � o

f-o

fo- f-f. . � 0,0 a ı o u ı • 0,2 T -. ı ı r Growth rates R, D 5E-2 cm/s o 2E-3 cm/s_ L5ı:.1=2 05Sb .lt 1 L2E-J = 1.6Sb .c.ı -o V o -.... -ı . ı 1 • ı 0,4 0,6 0.8 1,0 1,2

(%)Sb

Figure

3. Change in the distance of secondary dendrite arms due to

(3)

SA

Ü

. Fen Bilimleri Dergisi,

ll.

Cilt, 1. Sayı, s. 10-14, 2007

Almost same distances were obtained for 0.2 %, 0.5%, 1% Sb addition. When the microstructure of the studied material assessed it is seen that the best modifıcation can be obtained for

O.

1 %Sb level. Increase in the Sb over the 0.1 % does not change the eutectic microstructure of the alloy significantly, as seen in the images given in Figure 4. SEM images were taken from the material to asses the effect of Sb addition on the shape of silicon flakes. Sb addition refıned the flake

I

ike structure containing sh ort, closely, spaced silicon flakes as seen in Figure 5. Sb addition di d not res u lt in a flake-fibrous transition in the morphology of the silicon phase. The experimental studies showed that the eutectic morphology can be modifıed with growth rate. Increase in the growth rate reduced the distance between interflakes and the size of the flakes as seen in Figure

6.

The experimental studies showed that there is a relation between

"A

and R n. Where

"A

is the distance between silicon flakes, R growth rate and n grow rate exponent. The effect of growth rate on the distance between interflakes is given in Figure 7.

l5. . ·! : , O> ı&* J M"$ . • • o 'SE·l ıt:rdJ

•[

12' x.�s ' " A SE·2ads '-"' -M l'l .. � d! � ' c J B. • 1 ,_. -''R

!

�· .ı:s �

i

J: • �

• . . . 1 • 1 . () e e '

1),0 o.z (JA. Op (J',$ �,.e 1;l

(%")Sb-Figure

4. The change in the distance between interflakes and images

of eutectic microstructure of the alloys at different Sb amount ( X

100

a

12

Investigation

Of

Microstructure And Eutectic

Morphology

Of

Refıned Al-12.5% Si All oy

F. Kahraman

b

Figure

5.The effect of Sb addition on the eutectic morphology (a:

O

%

Sb, b:

O. l %

Sb) (X2000)

a

b

Figure

6. Effect of the growth rate on the eutectic morphology.(a:2E-3 cm/s, b:SE-2 cm/s) (X 2500).

(4)

SAÜ. Fen Bilimleri Dergisi,

11.

Cilt, 1. Sayı,

s. 10-14, 2007

1 5��----�--��--��--.-�--.-�-.

s

3

12 � tn o

� 9 Q o () ... -... tn

5

6 o � .... () .o Q) 3

... (1) ... o Vo Sb t:. O% Sb o o, ı% sb 'il 0,2% Sb o 0,5% s

t:. -3,25R-II.ı A.=3,5R·ıı.ı A.-3,3R'0'1 A,-3,15R.{l.t A.-2,9R..ıı,ı

o

O

L-�--L-�--��--��--��----�--0,00 0,01 0,02 0,03 0,04 0,05 0,06

Growth ra te R,

(cm/s)

Figure 7 .The re la tion b etween growth ra te and distance between interflakes

Experimental results confırm that AlSb compound is

present in Al-12.5 % Si with 1% Sb as seen in SEM

image given in Fiqure 8.

Figure 8. AlS b coınpound fonnation in Al-12.5% Si with 1 %Sb (X3500).

Over modifıcation of Al-12.5 % Si alloy is caused by

the formatian of the compound AISb. X-ray spectra a

result of studied material is given in Figure 9.

CONCLUSION

The microstructure of the unmodified Al-12.5

o/oS i all oy is a typical microstructure of coarse silicon

flakes often radiating from polyhedral primary silicon

crysta)s and a -Al dendrites.

Al-12.5 %Si alloy can be modifıed by Sb

addition or changing growth rate. Increase in the growth

rate effects alloy in similar manner obtained with Sb

addi tion.

13

1

·

ı

ı

. 1

� .

t

ı

·

ı.

t '

Investigation Of Microstructure And Eutectic

Morphology Of Refıned Al-12.5% Si All oy

F. Kahraman

Al

'

. '

.

__,A

. . . •'·' '•'• , , .. .... ,•, ı\ ... . ' ,, v,.,. ... , • . . ·.:•ı

Figure 9.Energy dispensive X-ray spectra recorded from 1 o/oSb added Al-12.5% S i al1oy.

Addition of the Sb refines the eutectic

microstructure by reducing distance between interflakes

and does not result in a flake -fıbrous transition in the

morphology of the silicon phase.

The addition of

Sb to Al-12.5 %Si all oy

prevents the formatian of prirnary silicon crystals.

Addition of

O.

1 o/o Sb to Al-12.5 %Si alloy

promotes the growth of columnar and slender dendrites

and results in a remarkable increase in the amount of

dendritic a-Al phase, compared to the unmodifıed alloy.

Distance between secondary dendrite arms

greatly decreases with addition of 0.1 %Sb. The effect

of the Sb addition over 0.1 %Sb is limited on the

distance of dendrite arms.

The best modifıcation was obtained for

0.1 %Sb level. Al-12.5%Si alloy with 0.1 o/oSb contains

short, closely spaced silicon flakes.

Distance between silicon flakes remarkably

decrease

with

0.1 %Sb

additions.taking

into

consideration the increase in the Sb amount over

0.1 %Sb, the decrease in the distance between flakes is

limited.

Over modification occurs in Al-12.5 %Si alloy

when modifıer is present in the amount of 1% Sb to

ca use i ts formatian as AlS b compound.

Increase in the growth rate, reduces the

distance between silicon flakes, and the size of the

flakes.

There is a relation between silicon flakes

distance and growth rate. Growth rate exponent changes

with the amount of Sb addition.

REFERENCES

l.

Xiufang B,Weimin W, Jingyu Q, Liquid structure

of Al-12.5 % Si alloy modified by antimony.

(5)

SAÜ. Fen Bilimleri Dergisi, 11.

Ci1t,

1. Sayt,

s.l0-14,2007

2.

Atasoy A, Yılınaz F, Elliot R, Growth structures

in alunıinium sihcon alloys 1. The coupled zon,

Journal of Crystal Growth, 66 ( 1984 ), 13 7-157.

3.

Elliot R, Eutectic solidifications ,Butterworths,

London, (1983).

4. Atasoy A, Yılmaz F, Elliot R, Growth structures

in aluminiun1 silicon alloys II.Effect of Strontium,

Journal of Crystal Growth, 7 8 (1986), 150-157.

5.

Liao H, Sun Y, Sun G, Correlation

between

mechanical properties and amount of dendrüic

Al phase in as-cast near-eutectic Al-

1

1.6 %Si

alloys modifıed with strontiuın. 1v1aterials Science

and Engineering. A335 (2002) 62-66.

6.

Hansen S, Looper C, Effect of antimony on the

phase equilirium of binary Al-Si alloys. Calphad,

24/3 (2000) 339-352.

7.

Kori S, Murty B, Chakraborty M, Development of

an effıcient grain refıner for Al-7Si

alloy.

Materials Science and Engineering A280 (2000)

5 8-6

ı .

8.

l(ori S, Murty B, Chakraborty M, Development of

an effıcient grain refiner for Al- 7Si alloy and its

nıodifıcation with strontiunı. Journal of Light

Metal s. A280 (2000) 94-104.

9.

Xiufang B, Weiınin W, Shujuan Y, Jingyu

Q,

Structure factors of ınodified liquid Al-Si alloys.

Science and Technology of Advanced Materials. 2

(2001) 19-23.

10.

Srivastava

V,

Mandal R, Ojha S, Microstructure

and mechanical properties of

Al-Si alloys

produced by spray fornling process. Materials

Science and Engineering A304-306 (2001)

555-558.

ll.

Nagei G, Portalier, Structural modification of

aluminiuın- Silicon alloys by antimony treatment.

AFS International Cast Metals Journal (1980) 1-5.

12.

Li u Q, Effect of antiınony on the growth kinetics of

high purity Al-Si a11oys.Scripta Materiaha 38

(1998)

ı

083-1089.

14

Investigation Of Microstructure And Eutectic

Morphology

Of

Refıned Al-12.5°/o Si All oy

Referanslar

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